Hot electron GaInAsP/InP surface emitter. Sceats, R., Dyson, A., Boland-Thoms, A., Balkan, N., Adams, M.J. and Button, C.C., 2000, July. In Symposium on Integrated Optoelectronics (pp. 882-893).…
Hot electron light emission from a GaInAsP/InP structure. Sceats, R., Dyson, A., Potter, R., Boland-Thoms, A., Balkan, N., Adams, M.J. and Button, C.C., 2001. IEE Proceedings-Optoelectronics, 148(1),…
Effects of oligonucleotide immobilization density on selectivity of quantitative transduction of hybridization of immobilized DNA. Watterson, J.H., Piunno, P.A., Wust, C.C. and Krull, U.J., 2000.…
TiO2/WO3 hybrid structures produced through a sacrificial polymer layer technique for pollutant photo-and photoelectrooxidation under ultraviolet and visible light illumination. Ilieva, M., Nakova,…
MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices. de La Mare, M., Krier, A., Zhuang, Q., Carrington, P.J. and Patane, A., 2011, January. In SPIE OPTO (pp.…