In this work, we report high performance p-ZnO/ n-Si heterojunction based ultraviolet (UV) photodetector fabricated by dual ion beam sputter deposition. Lithium-Phosphorus (Li-P) codoping route was used to realize low resistive and stable p-type ZnO. Current-voltage characteristic of p-ZnO/ n-Si heterojunction photodiode showed a good rectifying behavior with a rectification ratio of 170 at ± 3V.
The spectral response measurements of the photodiode showed excellent responsivity with a peak observed around ~325 nm and cutoff wavelength around 370 nm. The maximum responsivity achieved was 2.6 A/W at an applied reverse bias of -6 V. The external quantum efficiency determined was of the order of ~1000% which is attributed to the trap assisted multiplication of charge carriers.
Sharma, P., BHARDWAJ, R., Kumar, A. and Mukherjee, S., 2017. Trap Assisted Charge Multiplication Enhanced Photoresponse of Li-P codoped p-ZnO/n-Si Heterojunction Ultraviolet Photodetectors. Journal of Physics D: Applied Physics.
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