The effect of surface recombination of the Si can be reduced by the chemical passivation technique. Formation of 1-decene monolayer was directly attached on Si (111) surfaces by using mild thermal hydrosilylation (110 ºC, 20 h) in the presence of Lewis acid catalyst which uses hydrogenated (Si-H) surfaces as the precursor.
Characterization by XPS and water contact angle reveals that the alkyl monolayers are covalently bonded to silicon and show better stability after exposed to air. Kelvin probe measurements show that there is charge trapping and detrapping mechanism under illumination, even the samples was tested after 21 days. The surface traps and reversible filling of charges occurs in slow rate for the passivating layers on the silicon
IBRAHIM, M.A., TERIDI, M.A.M., LUDIN, N.A., SEPEAI, S., SOPIAN, K., ALDERMAN, N., DANOS, L. and MARKVART, T., Stability Study of Alkyl Monolayers Directly Attached to Si (111) Surface for Solar Cells Application.