Sb-Doped p-MgZnO/n-Si Heterojunction UV Photodetector Fabricated by Dual Ion Beam Sputtering.

11 November 2017

Abstract

Sb-doped p-Mg0.1Zn0.9O/n-Si-based heterojunction ultraviolet photodetectors were fabricated using dual ion beam sputtering. Current-Voltage measurements showed good rectifying behavior in fabricated devices with rectifying ratio as high as 251.35 at ± 4 V.

The detectors exhibited good ultraviolet spectral response having peak responsivity of 0.025 A/W (at 310 nm) and 0.32 A/W (at 320 nm) at -30 V. The values of peak responsivity and external quantum efficiency increased from 1.7 mA/W and 0.75% (at 0 V) to 0.32 A/W and 134.26% (at -30 V), respectively. The value of detectivity of heterojunction devices was calculated to be 3.65 × 1011 cm · Hz1/2·W-1 at -5 V.

Citation

Bhardwaj, R., Sharma, P., Singh, R. and Mukherjee, S., 2017. Sb-Doped p-MgZnO/n-Si Heterojunction UV Photodetector Fabricated by Dual Ion Beam Sputtering. IEEE Photonics Technology Letters, 29(14), pp.1215-1218.

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Categories: Solar & Photovoltaics

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