There is considerable interest in the development of InAsSb based nanowires for infrared photonics due to their high tunability across the infrared spectral range, high mobility and integration with silicon electronics. However, optical emission is currently limited to low temperatures due to strong non-radiative Auger and surface recombination. Here, we present a new structure based on conical type II InAsSb/InAs multi-quantum wells within InAs nanowires which exhibit bright mid-infrared photoluminescence up to room temperature.
The nanowires are grown by catalyst-free selective area epitaxy on silicon. This unique geometry confines the electron-hole recombination to within the quantum wells which alleviates the problems associated with recombination via surface states, whilst the quantum confinement of carriers increases the radiative recombination rate and suppresses Auger recombination. This demonstration will pave the way for the development of new integrated quantum light sources operating in the technologically important mid-infrared spectral range.
Alhodaib, A., Noori, Y., Carrington, P.J., Sanchez, A.M., Thompson, M.D., Young, R.J., Krier, A. and Marshall, A., 2017. Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires. Nano Letters.
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