We report on the open-circuit voltage recovery in GaSb quantum ring (QR) solar cells under high solar concentration up to 2500 suns. The detailed behaviour of type II GaSb/GaAs QR solar cells under solar concentration, using different temperatures and light illumination conditions, is analysed through optical and electrical measurements. Although enhancement of the short-circuit current was observed because of sub-bandgap photon absorption in the QR, the thermionic emission rate of holes was found to be insufficient for ideal operation.
The direct excitation of electron–hole pairs into QRs has revealed that the accumulation of holes is one of the causes of the open-circuit voltage (VOC) degradation. However, using concentrated light up to 2500 suns, the GaSb QR cell showed much quicker VOC recovery rate than a GaAs control cell.
Copyright © 2015 John Wiley & Sons, Ltd.
Fujita, H., Carrington, P.J., Wagener, M.C., Botha, J.R., Marshall, A.R., James, J., Krier, A., Lee, K.H. and Ekins‐Daukes, N.J., 2015. Open‐circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration. Progress in Photovoltaics: Research and Applications, 23(12), pp.1896-1900.
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