Localized Emission from Laser-Irradiated Defects in Two-Dimensional Hexagonal Boron Nitride.
11 November 2017
Abstract
Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional (2D) material for photonics device due to its large bandgap and flexibility in nanophotonic circuits. Here, we report bright and localized luminescent centres can be engineered in hBN monolayers and flakes using laser irradiation. The transition from hBN to cBN emerges in laser irradiated hBN large monolayers while is absent in processed hBN flakes.
Remarkably, the colour centres in hBN flakes exhibit room temperature cleaner single photon emissions with g2(0) ranging from 0.20 to 0.42, a narrower line width of 1.4 nm and higher brightness compared with monolayers. Our results pave the way to the engineering the deterministic defects in hBN formed by laser pulse and show great prospect for application of defects in hBN used as nano-size light source in photonics.
Citation
Hou, S., Birowosuto, M.D., Umar, S., Ange, A.M., Tay, R.Y., Philippe, C., Tay, B.K., Wang, H. and Teo, E.H.T., 2017. Localized Emission from Laser-Irradiated Defects in Two-Dimensional Hexagonal Boron Nitride. 2D Materials.
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Categories: Photonics & Optoelectronics, Material & Chemical