Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature.

12 November 2018

Abstract

While recent work developing GaAsBi for opto-electronic applications has shown promise, it has also indicated that the large valence band offset of GaAsBi/GaAs may cause undesirable hole-trapping in GaAsBi quantum wells. In this work, hole-trapping is demonstrated to be the cause of the reduced depletion width of GaAsBi/GaAs multi-quantum well solar cell devices under illumination.

Modelling of the quantum confinement energies in these devices shows how the carrier escape times vary as functions of temperature, providing a tool for the design for future GaAsBi based photovoltaic devices.

Citation

Richards, R.D., Rockett, T.B.O., Nawawi, M.R.M., Harun, F., Mellor, A., Wilson, T., Christou, C., Chen, S. and David, J.P.R., 2018. Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature. Semiconductor Science and Technology33(9), p.094008.

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Categories: Solar & Photovoltaics, Material & Chemical

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