Type II InSb/InAs quantum dots (QDs) were successfully grown on GaAs substrates using three different metamorphic buffer layer (MBL) designs. The structural properties of the resulting metamorphic InAs buffer layers were studied and compared using cross-sectional transmission electron microscopy and high resolution x-ray diffraction measurements. Photoluminescence (PL) originating from the InSb QDs was observed from each of the samples and was found to be comparable to the PL of InSb QDs grown onto homo-epitaxially deposited InAs.
The 4 K PL intensity and linewidth of InSb QDs grown onto a 3 µm thick InAs buffer layer directly deposited onto GaAs proved to be superior to that from QDs grown onto an InAs MBL using either AlSb or GaSb interlayers. Light-emitting diode structures containing ten layers of InSb QD in the active region were subsequently fabricated and electroluminescence from the QDs was obtained in the mid-infrared spectral range up to 180 K. This is the first step towards obtaining mid-infrared InSb QD light sources on GaAs substrates.
Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. and Krier, A., 2014. InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers. Semiconductor Science and Technology, 29(7), p.075011.
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