Improvement of front side contact and quantum efficiency of c-Si solar cell through light induced plating.

Abstract

Overall series resistance of the contact increases due to unwanted pores created during the time of contact formation in solar cell. Light induced plating is an industrial established process which is used to reduce the series resistance and to improve the contact resistance resulting in increase of fill factor of solar cell through modification of front side contact.

In this paper a theoretical modeling is done to show how distributed pores affect the series resistance and solar cell performance. Here we explored several parameters like: series resistance, shunt resistance, fill factor, short circuit current, and external quantum efficiency. Through our experimental setup it is found that the short circuit current improves significantly and also it is observed that during the time of experiment due to unintentional deposition of silver nanoparticles, external quantum efficiency improved by 5.249 % and a reduction of reflectance by 2.03 %. An overall enhancement of solar cell efficiency of 1.65 % is obtained during the process.

Citation

Maity, S., Metya, S.K., Bhunia, C.T., Chakraborty, P. and Sahu, P.P., 2015. Improvement of front side contact and quantum efficiency of c-Si solar cell through light induced plating. Optical and Quantum Electronics, 47(10), pp.3391-3404.

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Categories: Solar & Photovoltaics

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