ILGAR In2S3 buffer layers for Cd‐free Cu (In, Ga)(S, Se) 2 solar cells with certified efficiencies above 16%.
11 November 2012
In2S3 buffer layers have been prepared using the spray ion layer gas reaction deposition technique for chalcopyrite-based thin-film solar cells. These buffers deposited on commercially available Cu(In,Ga)(S,Se)2 absorbers have resulted in solar cells with certified record efficiencies of 16.1%, clearly higher than the corresponding CdS-buffered references. The deposition process has been optimized, and the resulting cells have been studied using current–voltage and quantum efficiency analysis and compared with previous record cells, cells with a thermally evaporated In2S3 buffer layer and CdS references.
Copyright © 2012 John Wiley & Sons, Ltd.
Sáez‐Araoz, R., Krammer, J., Harndt, S., Koehler, T., Krueger, M., Pistor, P., Jasenek, A., Hergert, F., Lux‐Steiner, M.C. and Fischer, C.H., 2012. ILGAR In2S3 buffer layers for Cd‐free Cu (In, Ga)(S, Se) 2 solar cells with certified efficiencies above 16%. Progress in Photovoltaics: Research and Applications, 20(7), pp.855-861.
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Categories: Solar & Photovoltaics