ILGAR In2S3 buffer layers for Cd‐free Cu (In, Ga)(S, Se) 2 solar cells with certified efficiencies above 16%.
11 November 2012
Abstract
In2S3 buffer layers have been prepared using the spray ion layer gas reaction deposition technique for chalcopyrite-based thin-film solar cells. These buffers deposited on commercially available Cu(In,Ga)(S,Se)2 absorbers have resulted in solar cells with certified record efficiencies of 16.1%, clearly higher than the corresponding CdS-buffered references. The deposition process has been optimized, and the resulting cells have been studied using current–voltage and quantum efficiency analysis and compared with previous record cells, cells with a thermally evaporated In2S3 buffer layer and CdS references.
Copyright © 2012 John Wiley & Sons, Ltd.
Citation
Sáez‐Araoz, R., Krammer, J., Harndt, S., Koehler, T., Krueger, M., Pistor, P., Jasenek, A., Hergert, F., Lux‐Steiner, M.C. and Fischer, C.H., 2012. ILGAR In2S3 buffer layers for Cd‐free Cu (In, Ga)(S, Se) 2 solar cells with certified efficiencies above 16%. Progress in Photovoltaics: Research and Applications, 20(7), pp.855-861.
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Category: Solar & Photovoltaics