Deep UV Narrow-Band Photodetector Based on Ion Beam Synthesized Indium Oxide Quantum Dots in Al2O3 Matrix.
24 April 2018
Semiconductor quantum dots (QDs) have attracted tremendous attention owing to their novel electrical and optical properties due to the size dependent quantum confinement effects. This provides an advantage of tunable wavelength detection, which is essential to realize spectrally selective photodetectors. We report the fabrication and characterization of high performance narrow band ultraviolet photodetector (UV-B) based on In2O3 nanocrystals embedded in Al2O3 matrices.
The In2O3 nanocrystals are synthesized in Al2O3 matrix by sequential implantation of In+ and N2+ ions and post-implantation annealing. The photodetector exhibits excellent optoelectronic performances with high spectral responsivity and external quantum efficiency. The spectral response showed a band-selective nature with a full width half maximum of ~ 60 nm, and the responsivity reaches up to 70 A/W under 290 nm at 5 V bias.
The corresponding rejection ratio to visible region was as high as 8400. The high performance of this photodetector makes it highly suitable for practical applications such as narrow-band spectrum-selective photodetectors. The device design based on ion-synthesized nanocrystals would provide a new approach for realizing a visible-blind photodetector.
Rajamani, S., Arora, K., Konakov, A., Belov, A., Korolev, D., Nikolskaya, A., Mikhaylov, A.N., Surodin, S., Kryukov, R., Nikolichev, D. and Sushkov, A., 2018. Deep UV Narrow-Band Photodetector Based on Ion Beam Synthesized Indium Oxide Quantum Dots in Al2O3 Matrix. Nanotechnology.
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