Aluminum-doped zinc magnesium oxide (Zn1−xMgxO:Al) films with the Mg content from x = 0 to 0.48 were obtained using atomic layer deposition (ALD). Together with the thorough studies of the properties of the deposited films, the ALD growth parameters conditioning possible applications of Zn1−xMgxO:Al films as transparent electrodes are investigated.
Very low film resistivities (≤~10−3 Ω cm) and the metallic-type conductivity behavior at room temperature for Zn1−xMgxO:Al films are observed for Mg content x < 0.19. The Mg content of x = 0.19 results in the optical absorption edge of Zn1−xMgxO:Al films at 3.81 eV (325 nm). Other film parameters like work function or sheet resistance can be easily modified by variation of growth parameters.
Luka, G., Witkowski, B.S., Wachnicki, L., Goscinski, K., Jakiela, R., Guziewicz, E., Godlewski, M., Zielony, E., Bieganski, P., Placzek-Popko, E. and Lisowski, W., 2014. Atomic layer deposition of Zn1− x Mg x O: Al transparent conducting films. Journal of Materials Science, 49(4), pp.1512-1518.
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Category: Solar & Photovoltaics