AlGaInP/Ge double-junction solar cell with Sb incorporation directly used for lattice-matched five-junction solar cell application.

11 November 2017

Abstract

AlGaInP is a prospectively valuable material for high-efficiency lattice-matched tandem AlGaInP/AlGaInAs/GaAs/GaInNAs/Ge (2.05/1.7/1.4/1.0/0.7 eV) five-junction solar cells. We examine the optical properties of AlGaInP materials with trimethylantimony (TMSb) incorporated at various flow speeds. Then, we apply Al0.1GaInP with TMSb incorporated at 15.6 µmol/min, whose band gap is 2.04 eV, to the fabrication of an AlGaInP/Ge double-junction (DJ) solar cell.

Moreover, we analyze the photovoltaic current density–voltage (J–V) characteristics, external quantum efficiencies (EQEs), and internal quantum efficiencies (IQEs) of DJ cells under a 1-sun AM0 spectrum. As elsewhere, Sb incorporation improves the crystal quality of AlGaInP and the fill factor of the DJ solar cell; on the other hand, it increases the band gap of AlGaInP.

Al0.08GaInP with Sb incorporation shows the same absorption edge of EQE as Al0.1GaInP without Sb incorporation, and Jsc increases approximately by 15.3% owing to the reduction of 2% Al composition.

Citation

Zhang, Y., Wang, Q., Zhang, X., Chen, B., Wu, B., Ma, D., Zhang, L. and Wang, Z., 2017. AlGaInP/Ge double-junction solar cell with Sb incorporation directly used for lattice-matched five-junction solar cell application. Japanese Journal of Applied Physics, 56(2), p.025501.

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Categories: Solar & Photovoltaics

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