An Al0.13GaInP sub-cell used as the top cell in the next generation of high efficiency multi-junction solar cells is fabricated. An efficiency of 10.04% with 1457.3 mV in Voc and 11.9 mA/cm2 in Isc was obtained. QE comparison was carried out to verify the influence of an O-related defect introduced by the high Al-content materials on the cell performance during MOCVD growth.
Hetero-structures are employed to confirm the origin of the decreasing short circuit current density compared to a GaInP single junction solar cell. An effective method to improve the performance of broadband solar cells by increasing Isc with a cost of Voc was proposed.
Hongbo, L., Xinyi, L., Wei, Z., Dayong, Z., Mengqi, S., Lijie, S. and Kaijian, C., 2014. A 2.05 eV AlGaInP sub-cell used in next generation solar cells. Journal of Semiconductors, 35(9), p.094010.
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